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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3272 DESCRIPTION *With TO-126 package *High breakdown voltage APPLICATIONS *For power amplification PINNINGsee Fig.2 PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 300 300 5 0.1 0.2 10 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3272 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5m A 2.0 V V(BR)CBO Collector-base breakdown voltage IC=10A;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10A; IC=0 5 V hFE DC current gain IC=10mA ; VCE=10V 39 180 A ICBO Collector cut-off current VCB=200V; IE=0 0.5 IEBO Emitter cut-off current VEB=4V; IC=0 0.5 A COB Output capacitance IE=0; VCB=30V;f=1MHz 3 pF fT Transition frequency IC=10mA ; VCB=30V 50 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3272 Fig.2 outline dimensions 3 |
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